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october 2015 docid026818 rev 3 1 / 12 this is information on a product in full production. www.st.com STW21N150K5 n - channel 1500 v, 0.7 typ.,14 a mdmesh? k5 power mosfet in a to - 247 package datasheet - production data figure 1 : internal schematic diagram features order code v ds r ds(on) max. i d p tot STW21N150K5 1500 v 0.9 14 a 446 w ? industrys lowest r ds(on) * area ? industrys best figure of merit (fom) ? ultra low gate charge ? 100% avalanche tested ? zener - protected applications ? switching applications description this very high voltage n - channel power mosfet is designed usin g mdmesh? k5 technology based on an innovative proprietary vertical structure. the result is a dramatic reduction in on - resistance and ultra - low gate charge for applications requiring superior power density and high efficiency. table 1: device summary order code marking package packing STW21N150K5 21n150k5 to - 247 tube t o-247 1 2 3
contents STW21N150K5 2 / 12 docid026818 rev 3 contents 1 electrical ratings ................................ ................................ ............. 3 2 electrical characteristics ................................ ................................ 4 2.1 electrical characteri stics (curves) ................................ ...................... 6 3 test circuits ................................ ................................ ..................... 8 4 package information ................................ ................................ ....... 9 4.1 to - 247 package information ................................ ............................. 9 5 revision history ................................ ................................ ............ 11
STW21N150K5 electrical ratings docid026818 rev 3 3 / 12 1 electrical ratings table 2: absolute maximum ratings symbol parameter value unit v g s gate - source voltage 30 v i d drain current at t c = 25 c 14 a i d drain current at t c = 100 c 8.7 a i dm (1) drain current (pulsed) 56 a p tot total dissipation at t c = 25 c 446 w dv/dt (2) peak diode recovery voltage slope 4.5 v/ns dv/dt (3) mosfet dv/dt ruggedness 50 v/ns t j operating junction temperature - 55 to 150 c t stg storage temperature notes: (1) pulse width limited by safe opera ting area (2) i sd 14 a, di/dt 100 a/s, v peak v (br)dss (3) v ds 1200 v table 3: thermal data symbol parameter value unit r thj - case thermal resistance junction - case 0.28 c/w r thj - amb thermal resistance junction - amb 50 c/w table 4: avalanche cha racteristics symbol parameter value unit i ar (1) max current during repetitive or single pulse avalanche 5 a e as (2) single pulse avalanche energy 1100 mj notes: (1) pulse width limited by t jmax (2) starting t j = 25 c, i d = i as , v dd = 50 v
electrical characteristics STW21N150K5 4 / 12 docid026818 rev 3 2 electrical characteristics (t case = 25 c unless otherwise specified) table 5: static symbol parameter test conditions min. typ. max. unit v (br)dss drain - source breakdown voltage v gs = 0 v, i d = 1 ma 1500 v i dss zero gate voltage drain current v gs = 0 v, v ds = 1500 v 1 a v gs = 0 v, v ds = 1500 v, tc = 125 c 50 a i gss gate body leakage current v ds = 0, v gs = 20 v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 100 a 3 4 5 v r ds(on) static drain - source on - resistance v gs = 10 v, i d = 7 a 0.7 0 .9 table 6: dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v gs = 0 v, v ds = 100 v, f = 1 mhz - 3145 - pf c oss output capacitance - 172 - pf c rss reverse transfer capacitance - 1 - pf c o(tr) (1) equivalent capacitance time related v ds = 0 v to 1200 v, v gs = 0 v - 161 - pf c o(er) (2) equivalent capacitance energy related - 65 - pf r g intrinsic gate resistance f = 1 mhz, i d = 0 a - 2.4 - q g t otal gate charge v dd = 1200 v, i d = 7 a v gs = 10 v (see figure 15: "test circuit for gate charge behavior" ) - 89 - nc q gs gate - source charge - 16 - nc q gd gate - drain charge - 59 - nc notes: (1) time related is defined as a constant equivalent capacitance giving the same charging time as coss when vds increases from 0 to 80% vdss (2) energy related is defined as a constant equivalent capacitance giving the same stored energy as coss when vds increases from 0 to 80% vdss table 7: switching times symbol parameter test conditions min. typ. max. unit t d(on) turn - on delay time v dd = 750 v, i d = 3.5 a, r g = 4.7 v gs = 10 v (see figure 17: "unclamped inductive load test circuit" ) - 34 - ns t r rise time - 14 - ns t d(off) turn - off delay time - 134 - ns t f fall time - 26 - ns
STW21N150K5 electrical characteristics docid026818 rev 3 5 / 12 table 8: source drain diode symbol parameter test conditions min. typ. max. unit i sd source - drain current - 7 a i sdm source - drain current (pulsed) - 28 a v sd (1) forward on voltage i sd = 7 a, v gs = 0 v - 1.5 v t rr reverse recovery time i sd = 7 a, v dd = 60 v di/dt = 100 a/s, (see figure 16: "test circuit for inductive load switching and diode recovery times" ) - 448 ns q rr reverse recovery charge - 8.24 c i rrm reverse recovery current - 36.8 a t rr reverse recovery time i sd = 7 a,v dd = 60 v di/dt = 100 a/s, tj = 150 c (see figure 16: "test circuit fo r inductive load switching and diode recovery times" ) - 564 ns q rr reverse recovery charge - 9.48 c i rrm reverse recovery current - 33.6 a notes: (1) pulsed: pulse duration = 300s, duty cycle 1.5% table 9: gate - source zener diode symbol parame ter test conditions min. typ. max. unit v (br)gso gate - source breakdown voltage i gs = 1 ma, i d = 0 a 30 - v the built - in back - to - back zener diodes are specifically designed to enhance the esd performance of the device. the zener voltage facilitates effi cient and cost - effective device integrity protection, thus eliminating the need for additional external componentry .
electrical characteristics STW21N150K5 6 / 12 docid026818 rev 3 2.1 electrical characteristics (curves) figure 2 : safe operating area figure 3 : thermal impedance figure 4 : output characteristics figure 5 : transfer characteristics figure 6 : gate cha rge vs gate - source voltage figure 7 : static drain - source on - resistance
STW21N150K5 electrical characteristics docid026818 rev 3 7 / 12 figure 8 : capacitance variations figure 9 : normalized gate threshold voltage vs temperature figure 10 : normalized on - resistance vs temperature figure 11 : normalized v(br)dss vs temperature figure 12 : maximum avalanche energy vs temperature figure 13 : source - drain diode forward characteristics
test circuits STW21N150K5 8 / 12 docid026818 rev 3 3 test circuits figure 14 : test circuit for resistive load switching times figure 15 : test circuit for gate charge behavior figure 16 : test circuit for inductive load switching and diode recovery times figure 17 : unclamped inductive load test circuit f igure 18 : unclamped inductive waveform figure 19 : switching time waveform
STW21N150K5 package information docid026818 rev 3 9 / 12 4 package information in order to meet environmenta l requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark. 4.1 to - 247 package information figure 20 : to - 247 package outline
package information STW21N150K5 10 / 12 docid026818 rev 3 table 10: to - 247 package mechanical data dim. mm. min. typ. max. a 4.85 5.15 a1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 d 19.85 20.15 e 15.45 15.75 e 5.30 5.45 5.60 l 14.20 14.80 l1 3.70 4.30 l2 18.50 ?p 3.55 3.65 ?r 4.50 5.50 s 5.30 5.50 5.70
STW21N150K5 revision history docid026818 rev 3 11 / 12 5 revision history table 11: document revision history date revision changes 26 - aug - 2015 1 first release. 10 - sep - 2015 2 text and formatting changes throughout document. updated features on cover page. updated sections electrical ratings and electrical characteristics . added section electrical characteristics (curves) . updated section to - 247 package information . 0 1 - o ct - 2015 3 on cover page: - updated figure internal schematic diagram in section electrical characteristics : - updat ed and renamed table static (was on/off states).
STW21N150K5 12 / 12 docid026818 rev 3 important notice C please read carefully stmicroelectronics nv and its subsidiaries (st) reserve the right to make chan ges, corrections, enhancements, modifications, and improvements to st products and/or to this document at any time without notice. purchasers should obtain the latest relevant information on st products before placing orders. st products are sold pursuant to sts terms and conditions of sale in place at the time of order acknowledgement. purchasers are solely responsible for the choice, selection, and use of st products and st assumes no liability for applicati on assistance or the design of purchasers p roducts. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provisions different from the information set forth herein shall void any warranty granted by st f or such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces information previously supplied in any prior versions of this document. ? 2015 stmicr oelectronics C all rights reserved

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